MBR1100G-Z41-R Просмотр технического описания (PDF) - Unisonic Technologies
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MBR1100G-Z41-R Datasheet PDF : 3 Pages
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MBR1100
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VR
100
V
Working Peak Reverse Voltage
VRWM
100
V
Repetitive Peak Reverse Voltage
VRRM
100
V
Maximum RMS Reverse Voltage
VR(RMS)
70
V
Average Forward Rectified Output Current
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
IFSM
50
A
Voltage Rate of Change (Rated VR)
dv/dt
10
V/ns
Operating Junction Temperature (Note 1)
TJ
-65~+150
°C
Storage Temperature (Note 1)
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
50
ELECTRICAL CHARACTERISTICS (Note 2) (TA=25°C, unless otherwise noted.)
UNIT
°C/W
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Instantaneous Forward Voltage (Note 2)
VF
IF=1A, TL=25°C
IF=1A, TL=100°C
0.79 V
0.69 V
Instantaneous Reverse Current @ Rated dc
Voltage (Note 2)
IR
TL=25°C
TL=100°C
50 μA
5.0 mA
Notes: 1. The heat generated must be less than the thermal conductivity from Junction to Ambient: PD/TJ<1/θJA.
2. Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-270.b
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