MRF517 Просмотр технического описания (PDF) - Advanced Power Technology
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производитель
MRF517 Datasheet PDF : 5 Pages
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCER
BVCEO
BVCBO
BVEBO
ICEO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 330 ohms)
Collector-Emitter Breakdown Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, IB = 0)
(on)
HFE
DC Current Gain
(IC = 60 mAdc, VCE = 10 Vdc)
DYNAMIC
Symbol
Test Conditions
fT
Current-Gain - Bandwidth Product
(IC = 60 mAdc, VCE = 15 Vdc, f = 200 MHz)
Cob
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL
Symbol
NF
Gpe
Test Conditions
Broadband Noise Figure
(IC = 50 mAdc, VCE = 15Vdc, f = 300 MHz
Common Emitter Amplifier Power Gain
(VCE = 15 Vdc, IC = 60 mAdc, f = 300MHz
MRF517
Value
Min.
Typ.
Max.
25
-
-
20
-
-
30
-
-
3.0
-
-
-
-
100
Unit
Vdc
Vdc
Vdc
Vdc
µAdc
50
-
150
-
Value
Min.
Typ.
Max.
3
4
-
-
3.0
4.5
Unit
GHz
pF
Value
Min.
Typ.
Max.
Unit
-
-
7.5
dB
9
10
-
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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