MRF517 Просмотр технического описания (PDF) - Advanced Power Technology

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производитель

MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

MRF517

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Gpe = 10 dB (typ) @ 60 mA, 300 MHz

• 3 GHz Current-Gain Bandwidth Product @ 60mA

• Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment.

Applications include low noise broadband amplifier; pre-driver, driver, and output stages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

PD

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

Value

20

35

3.0

150

Unit

Vdc

Vdc

Vdc

mA

2.5

Watts

0.02

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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