BUJ302AD,118 Просмотр технического описания (PDF) - NXP Semiconductors.

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BUJ302AD,118

NPN power transistor

NXP Semiconductors. 

NXP Semiconductors

BUJ302AD

NPN power transistor

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance from junction to

mounting base

see Figure 5

thermal resistance from junction to ambient in free air

Min Typ Max Unit

-

-

1.56 K/W

-

60 -

K/W

10

001aab998

Zth(j-mb)

(K/W)

1 δ = 0.5

10−1

0.2

0.1

0.05

0.02

0.01

Ptot

δ = tp

T

10−2

10−5

10−4

10−3

10−2

10−1

tp

t

T

1

10

tp (s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width

BUJ302AD

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 28 March 2011

© NXP B.V. 2011. All rights reserved.

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