M8GZ47 Просмотр технического описания (PDF) - Toshiba

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M8GZ47

THYRISTOR SILICON PLANAR TYPE BI−DIRECTIONAL TRIODE

Toshiba 

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A

AC POWER CONTROL APPLICATIONS

Unit: mm

l Repetitive Peak Off−State Voltage

l R.M.S ON−State Current

l High Commutating (dv / dt)

l Isolation Voltage

: VDRM = 400, 600V

: IT (RMS) = 8A

: VISOL = 1500V AC

MAXIMUM RATINGS

CHARACTERISTIC

Repetitive Peak

Off−State Voltage

SM8GZ47

SM8GZ47A

SM8JZ47

SM8JZ47A

R.M.S On−State Current

(Full Sine Waveform Tc = 83°C)

Peak One Cycle Surge On-State

Current (Non−Repetitive)

I2t Limit Value

Critical Rate of Rise of On−State

Current

(Note 1)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Voltage

Peak Gate Current

Junction Temperature

Storage Temperature Range

Isolation Voltage (AC, t = 1min.)

SYMBOL

VDRM

IT (RMS)

ITSM

I2t

di / dt

PGM

PG (AV)

VGM

IGM

Tj

Tstg

VISOL

RATING

400

600

8

80 (50Hz)

88 (60Hz)

32

50

5

0.5

10

2

−40~125

−40~125

1500

UNIT

V

A

A

A2s

A / µs

W

W

V

A

°C

°C

V

JEDEC

JEITA

TOSHIBA

Weight: 1.7g

―

―

13−10H1A

Note 1: di / dt Test Condition

VDRM = 0.5×Rated

ITM ≤ 12A

tgw ≥ 10µs

tgr ≤ 250ns

iGP = IGT×2.0

1

2001-07-13

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