IRG4PH50KD-E Просмотр технического описания (PDF) - International Rectifier
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IRG4PH50KD-E Datasheet PDF : 10 Pages
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30
25
20
S qua re wave:
15
60% of rated
v olta ge
I
10
Ideal diodes
5
0
0.1
IRG4PH50KD
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 40W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1
10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 150 °C
10
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10 11 12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
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