MC33035
Figure 27. MOSFET Drive Precautions
21
Rg
D
20
Rg
D
19
Rg
D
40 k
9
100 mV 15
23
D = 1N5819
Brake Input
Series gate resistor Rg will dampen any high frequency oscillations caused
by the MOSFET input capacitance and any series wiring induction in the
gate–source circuit. Diode D is required if the negative current into the Bot-
tom Drive Outputs exceeds 50 mA.
Figure 28. Bipolar Transistor Drive
C
21
C
20
C
19
40 k
9
100 mV 15
23
Brake Input
IB
+
0
t
–
Base Charge
Removal
The totem–pole output can furnish negative base current for enhanced tran-
sistor turn–off, with the addition of capacitor C.
Figure 29. Current Sensing Power MOSFETs
D SENSEFET
21
G
S
MK
20
19
9
15 RS
100 mV
16 Gnd
Power Ground:
To Input Source Return
[ @ @ ) VPin 9
RS Ipk RDS(on)
rDM(on) RS
If: SENSEFET = MPT10N10M
RS = 200 Ω, 1/4 W
Then : VPin 9 ≈ 0.75 Ipk
Control Circuitry Ground (Pin 16) and Current Sense Inverting Input (Pin 15)
must return on separate paths to the Central Input Source Ground.
Virtually lossless current sensing can be achieved with the implementation of
SENSEFET power switches.
Figure 30. High Voltage Boost Supply
VCC = 12 V
8
4
6
R
5
Q
S
2
1 MC1555
0.001
18 k
VM + 12
VM + 8.0
7
VM + 4.0 0
20 40 60
Boost Current (mA)
3
1.0/200 V
*
VBoost
1N5352A * 22
* = MUR115
VM = 170 V
This circuit generates VBoost for Figure 25.
MOTOROLA ANALOG IC DEVICE DATA
13