SIHF840AS Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SIHF840AS

Power MOSFET

Vishay Semiconductors 

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100

10

TJ = 150 °C

1

TJ = 25 °C

0.1

0.2

VGS = 0 V

0.5

0.8

1.1

1.4

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 78.04 A

16

VDS = 400V

VDS = 250V

VDS = 100V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

10

20

30

40

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1ms

1

10ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10000

www.vishay.com

4

Document Number: 91066

S-81412-Rev. A, 07-Jul-08

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