2SD716 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD716 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD716
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0
100
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ,IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
2.0
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A ; VCE=5V
VCB=100V; IE=0
VEB=5V; IC=0
1.5
V
10
μA
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
55
160
fT
Transition frequency
IC=1A ; VCE=5V
12
固IN电C半H导AN体GE SEMICONDUTOR Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
100
hFE Classifications
R
O
55-110
80-160
MHz
pF
2
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