MT46V16M16BG Просмотр технического описания (PDF) - Micron Technology

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производитель

MT46V16M16BG

256Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

CK#

CK

COMMAND

ADDRESS

DQS

DQ

CK#

CK

COMMAND

ADDRESS

DQS

DQ

256Mb: x4, x8, x16

DDR SDRAM

Figure 17: Terminating a READ Burst

T0

T1

T2 T2n T3

T4

T5

READ

BST5

NOP

NOP

NOP

NOP

Bank a,

Col n

CL = 2

DO

n

T0

T1

T2 T2n T3

T4

T5

READ

BST5

NOP

NOP

NOP

NOP

Bank a,

Col n

CL = 2.5

DO

n

DON’T CARE

TRANSITIONING DATA

NOTE:

1. DO n = data-out from column n.

2. Burst length = 4 or 8.

3. Subsequent element of data-out appears in the programmed order following DO n.

4. Shown with nominal tAC, tDQSCK, and tDQSQ.

5. BST = BURST TERMINATE command; page remains open.

09005aef8076894f

256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN

26

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

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