BSS82 Просмотр технического описания (PDF) - Siemens AG

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Компоненты Описание

производитель

BSS82

PNP Silicon Switching Transistors

Siemens AG 

BSS 80

BSS 82

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BSS 80

BSS 82

V(BR)CE0

40

–

60

–

Collector-base breakdown voltage

IC = 10 µA

V(BR)CB0 60

–

Emitter-base breakdown voltage

IE = 10 µA

V(BR)EB0 5

–

Collector-base cutoff current

VCB = 50 V

VCB = 50 V, TA = 150 ˚C

ICB0

–

–

–

–

Emitter-base cutoff current

VEB = 3 V

IEB0

–

–

DC current gain

IC = 100 µA, VCE = 10 V

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V1)

IC = 150 mA, VCE = 10 V1)

IC = 500 mA, VCE = 10 V1)

hFE

BSS 80 B/82 B

BSS 80 C/82 C

BSS 80 B/82 B

BSS 80 C/82 C

BSS 80 B/82 B

BSS 80 C/82 C

BSS 80 B/82 B

BSS 80 C/82 C

BSS 80 B/82 B

BSS 80 C/82 C

40

–

75

–

40

–

100 –

40

–

100 –

40

–

100 –

40

–

50

–

Collector-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VCEsat

–

–

–

–

Base-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VBEsat

–

–

–

–

V

–

–

–

–

10 nA

10

µA

10 nA

–

–

–

–

–

–

–

120

300

–

–

V

0.4

1.6

1.3

2.6

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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