BFR93AW Просмотр технического описания (PDF) - Philips Electronics

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BFR93AW

NPN 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR93AW

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITION

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

open emitter

open base

open collector

up to Ts = 93 °C; see Fig.2; note 1

MIN.

−

−

−

−

−

−65

−

MAX.

15

12

2

35

300

+150

150

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to

soldering point

CONDITION

up to Ts = 93 °C; note 1

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

190

UNIT

K/W

400

P tot

(mW)

300

MLB540

200

100

0

0

50

100

150

200

Ts ( o C)

Fig.2 Power derating curve.

1995 Sep 18

3

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