2SD1590 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD1590

NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1590

DESCRIPTION

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 3A

·High DC Current Gain

: hFE= 2000(Min) @ IC= 3A

·Complement to Type 2SB1099

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed switching industrial use.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

8

A

ICP

Collector Current-Pulse

12

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.8

A

2

W

25

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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