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HAF2012 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
HAF2012
Hitachi
Hitachi -> Renesas Electronics 
HAF2012 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HAF2012(L), HAF2012(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain current
Drain current
Drain to source breakdown
voltage
I D1
I D2
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltege drain
current
I GSS1
I GSS2
I GSS3
I GSS4
I GS(op)1
I GS(op)2
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
Output capacitance
Coss
Min
10
60
16
–2.8
1.0
6
Typ
0.8
0.35
50
30
12
630
Max Unit
A
10
mA
V
V
V
100
µA
50
µA
1
µA
–100 µA
mA
mA
250
µA
2.25 V
65
m
43
m
S
pF
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward VDF
voltage
7.5
µs
29
µs
34
µs
26
µs
1.0
V
Body–drain diode reverse trr
recovery time
110
ns
Over load shut down
t os1
1.8
ms
operation time Note4
t os2
0.7
ms
Note: 3. Pulse test
4. Include the junction temperature rise of the over loaded condition.
• See characteristic curve of HAF2001.
Test Conditions
VGS = 3.5V, VDS = 2V
VGS = 1.2V, VDS = 2V
ID = 10mA, VGS = 0
IG = 100µA, VDS = 0
IG = –100µA, VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VGS = 1.2V, VDS = 0
VGS = –2.4V, VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 10A, VGS = 4V Note3
ID = 10A, VGS = 10V Note3
ID = 10A, VDS = 10V Note3
VDS = 10V , VGS = 0
f = 1 MHz
ID = 5A, VGS = 5V
RL = 6
IF = 20A, VGS = 0
IF = 20A, VGS = 0
diF/ dt =50A/µs
VGS = 5V, VDD = 12V
VGS = 5V, VDD = 24V
3

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