STP60NF03L Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STP60NF03L

N-CHANNEL 30V / STripFET POWER MOSFET

STMicroelectronics 

STP60NF03L

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

Gate-source voltage

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(1)

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

EAS(2) Single pulse avalanche energy

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. Starting Tj = 25°C, ID = 30A, VDD = 20V

Table 2. Thermal data

Rthj-case

Rthj-a

Rthc-sink

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Thermal resistance case-sink typ

Tl

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

30

± 20

60

42

240

100

0.67

650

175

-65 to 175

Unit

V

V

V

A

A

A

W

W/°C

mJ

°C

1.5

°C/W

62.5

°C/W

0.5

°C/W

300

°C

3/12

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