2SD330 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SD330

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD330

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A

VBE(on) Base-Emitter On Voltage

IC= 1A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 20V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 2V

hFE-2

DC Current Gain

IC= 0.1A ; VCE= 2V

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 5V

MIN TYP. MAX UNIT

50

V

1.0

V

1.5

V

100 μA

1.0 mA

40

320

35

8

MHz

‹ hFE-1 Classifications

C

D

E

F

40-80 60-120 100-200 160-320

isc website：www.iscsemi.cn

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