NLX1G11AMX1TCG Просмотр технического описания (PDF) - ON Semiconductor
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NLX1G11AMX1TCG Datasheet PDF : 8 Pages
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NLX1G11
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 2.5 nS)
VCC
Symbol
Parameter
(V)
Test
Condition
TA = 25 5C
Min Typ Max
TA = −555C to
+1255C
Min Max Unit
tPLH,
tPHL
Propagation Delay,
Input to Output
1.65−1.95 RL = 1 MW, CL = 15 pF
2.0
5.5 18.5 2.0
19
ns
2.3−2.7
RL = 1 MW, CL = 15 pF
0.8
3.0
11
0.8 11.5
3.0−3.6
RL = 1 MW, CL = 15 pF
0.5
2.6
7.5
0.5
8.0
RL = 500 W, CL = 50 pF 1.5
3.0
8.5
1.5
9.0
4.5−5.5
RL = 1 MW, CL = 15 pF
0.5
2.2
5.5
0.5
6.0
RL = 500 W, CL = 50 pF 0.8
2.4
7.0
0.8
7.5
CIN
Input Capacitance
5.5
VIN = 0 V or VCC
4.0
pF
CPD
Power Dissipation
3.3
10 MHz
20
pF
Capacitance (Note 7)
5.5
VIN = 0 V or VCC
26
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
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