LQA10N200C Просмотр технического описания (PDF) - Unspecified
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LQA10N200C Datasheet PDF : 8 Pages
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LQA10T200C, LQA10N200C
Qspeed™ Family
200 V, 10 A Common-Cathode Diode
Product Summary
IF(AVG) per diode
10
A
VRRM
200
V
QRR (Typ at 125 °C)
32.4
nC
IRRM (Typ at 125 °C)
2.6
A
Softness tb/ta (Typ at 125 °C) 0.39
Pin Assignment
General Description
This device has the lowest QRR of any 200 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
AC/DC and DC/DC output rectification
Output and freewheeling diodes
Motor drive circuits
DC-AC inverters
Features
TO-220AB
LQA10T200C A1
A2
TO-252 DPAK
LQA10N200C
K
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/s)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size and count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
VRRM
IF(AVG)
Parameter
Peak repetitive reverse voltage
Average forward current
IFSM
IFSM
TJ
TSTG
PD
Non-repetitive peak surge current
Non-repetitive peak surge current
Operating junction temperature range
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
TJ = 25 °C
Per Diode, TJ = 150 °C, TC = 130 °C
Per Device, TJ = 150 °C, TC = 130 °C
Per Diode, 60 Hz, ½ cycle
Per Diode, ½ cycle of t = 28 s
Sinusoid, TC = 25 °C
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Rating
200
5
10
60
Units
V
A
A
A
350
A
–55 to 150 °C
–55 to 150 °C
300
°C
27.7
W
Thermal Resistance
Symbol Resistance from:
RJA
Junction to ambient
RJC
Junction to case
Conditions
TO-220AB (only)
Per Diode
Per Device
Rating
62
4.5
2.3
Units
°C/W
°C/W
°C/W
www.powerint.com
April 2013
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