CY7C1381D-100BZXI(2011) Просмотр технического описания (PDF) - Cypress Semiconductor

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производитель

CY7C1381D-100BZXI
(Rev.:2011)

18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM

Cypress Semiconductor 

ZZ Mode Electrical Characteristics

Parameter

IDDZZ

tZZS

tZZREC

tZZI

tRZZI

Description

Sleep mode standby current

Device operation to ZZ

ZZ recovery time

ZZ active to sleep current

ZZ inactive to exit sleep current

Test Conditions

ZZ > VDD– 0.2 V

ZZ > VDD – 0.2 V

ZZ < 0.2 V

This parameter is sampled

This parameter is sampled

CY7C1381D/CY7C1381F

CY7C1383D/CY7C1383F

Min

–

–

2tCYC

–

0

Max

80

2tCYC

–

2tCYC

–

Unit

mA

ns

ns

ns

ns

Document Number: 38-05544 Rev. *I

Page 11 of 34

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