ATF-52189-BLKG Просмотр технического описания (PDF) - Avago Technologies
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ATF-52189-BLKG Datasheet PDF : 19 Pages
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Symbol Parameters and Test Conditions
PAE
Power Added Efficiency
f=900 MHz
f=2.0 GHz
f=2.4 GHz
ACLR
Adjacent Channel Leakage
Power Ratio[1,2]
Offset BW = 5 MHz
Offset BW = 10 MHz
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz
Units
Min.
Typ.
%
—
50.0
%
40.0
55.0
%
—
52.0
dBc
—
-58.0
dBc
—
-66.0
Max.
—
—
—
—
Input Matching Circuit
Input
Γ_mag=0.76
DUT
Γ_ang=-131.3°
Output Matching Circuit
Γ_mag=0.32
Γ_ang=-176.6°
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]
150
Stdev=0.35
150
Stdev=0.30
120
120
90
–3 Std
60
+3 Std
90
–3 Std
60
+3 Std
30
30
0
41.5 42 42.5 43 43.5
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4.5V/200 mA.
LSL = 38.5 dBm, Nominal = 42.4 dBm.
150
Stdev=0.16
120
0
26.25 26.75 27.25 27.75 28.25
P1dB (dBm)
Figure 3. P1dB @ 2 GHz, 4.5V, 200 mA.
LSL = 25.5 dBm, Nominal = 27.1 dBm.
150
Stdev=0.10
120
90 –3 Std
60
+3 Std
90 –3 Std
60
+3 Std
30
30
0
15.5
16
16.5
17
GAIN (dBm)
Figure 4. Gain @ 2 GHz, 4.5V, 200 mA.
LSL = 14.8 dBm, Nominal = 16.1 dBm,
USL = 17.8 dB.
33
0
1
1.25 1.5 1.75
2
NF (dBm)
Figure 5. NF @ 2 GHz, 4.5V, 200 mA.
Nominal = 1.5 dBm.
Notes:
1. Distribution data sample size is 500 samples
taken from 3 different wafers. Future wafers
allocated to this product may have nominal
values anywhere between the upper and
lower limits.
2. Measurements are made on production test
board, which represents a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses
have been de-embedded from actual
measurements.
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