74AHC1G32GW-Q100,1 Просмотр технического описания (PDF) - NXP Semiconductors.
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74AHC1G32GW-Q100,1 Datasheet PDF : 13 Pages
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Nexperia
74AHC1G32-Q100; 74AHCT1G32-Q100
2-input OR gate
Table 8. Dynamic characteristics …continued
GND = 0 V; tr = tf = 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
For type 74AHCT1G32-Q100
tpd
propagation A and B to Y;
[1]
delay
see Figure 5;
[3]
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.3 6.9 1.0 8.0
1.0
9.0
ns
CL = 50 pF
-
4.8 7.9 1.0 9.0
1.0
10
ns
CPD
power
per buffer;
[4] -
17 -
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
12. Waveforms
A, B input
Y output
VM
tPHL
VM
Measurement points are given in Table 9.
Fig 5. The input (A and B) to output (Y) propagation delays
Table 9. Measurement points
Type number
Input
VI
74AHC1G32-Q100
GND to VCC
74AHCT1G32-Q100
GND to 3.0 V
VM
0.5 VCC
1.5 V
tPLH
mna167
Output
VM
0.5 VCC
0.5 VCC
74AHC_AHCT1G32_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 July 2012
© Nexperia B.V. 2017. All rights reserved
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