SIA436DJ-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SIA436DJ-T1-GE3 Datasheet PDF : 9 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA436DJ
Vishay Siliconix
50
VGS = 5 V thru 2 V
40
VGS = 1.5 V
30
20
10
VGS = 1 V
0
0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.02
VGS = 1.2 V
0.015
VGS = 1.5 V
0.01
VGS = 1.8 V
VGS = 2.5 V
0.005
0
VGS = 4.5 V
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 15.7 A
4
VDS = 2 V
3
VDS = 4 V
2
VDS = 6.4 V
1
20
15
10
5
0
0
2050
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1640
Ciss
1230
820
410
0
0
Coss
Crss
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 15.7 A
1.3
1.1
VGS = 4.5 V
VGS = 2.5 V
0.9
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S11-2242-Rev. A, 14-Nov-11
3
Document Number: 63535
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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