SIHG47N60E Просмотр технического описания (PDF) - Vishay Semiconductors
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SIHG47N60E Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHG47N60E
Vishay Siliconix
180
160
140
120
100
80
60
40
20
0
0
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
5.0 V
TJ = 25 °C
5
10
15
20
25
30
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
3.0
ID = 24 A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10 V
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
120
100
80
60
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
40
20
0
0
TJ = 150 °C
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
100 000
10 000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Ciss
Coss = Cds + Cgd
1000
Coss
100
Crss
10
1
0
100 200 300 400 500 600
V DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
180
160
140
120
100
80
TJ= 150 °C
60
40
20
0
0
T J= 25 °C
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
5000
500
50
0
35
30
25
Coss
20
Eoss
15
10
5
100 200 300 400 500
VDS
Fig. 6 - Coss and Eoss vs. VDS
0
600
S17-1097-Rev. N, 24-Jul-17
3
Document Number: 91474
For technical questions, contact: hvm@vishay.com
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