2N6507T Просмотр технического описания (PDF) - ON Semiconductor
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2N6507T Datasheet PDF : 7 Pages
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2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Features
•ăGlass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
•ăSmall, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•ăBlocking Voltage to 800 Volts
•ă300 A Surge Current Capability
•ăPb-Free Packages are Available*
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 3
2N650xG
AYWW
1
2
3
x = 4, 5, 7, 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Device
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2008
1
April, 2006 - Rev. 8
Publication Order Number:
2N6504/D
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