STW62N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STW62N65M5

Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package

STMicroelectronics 

STW62N65M5

Electrical characteristics

Figure 8. Capacitance variations

&

S)

$0Y



&LVV



Figure 9. Output capacitance stored energy

(RVV

—-



$0Y







&RVV



&UVV









 9'69

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.10

AM05459v2

ID=250 µA

VDS=VGS









       9'69

Figure 11. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

VGS=10 V

AM15497v1

1.00

2

1.5

0.90

1

0.80

0.5

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0

-55 -25 5 35 65 95

TJ(°C)

Figure 12. Source-drain diode forward

characteristics

Figure 13. Normalized V(BR)DSS vs temperature

VSD

(V)

TJ=-50°C

1.2

1.0

AM05461v1

V(BR)DSS

(norm)

1.08

1.06

1.04

ID = 1mA

AM10399v1

0.8

0.6

TJ=150°C

0.4

0.2

TJ=25°C

0

0 10 20 30 40 50 ISD(A)

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

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