STW62N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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STW62N65M5

Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package

STMicroelectronics 

STW62N65M5

Electrical characteristics

Symbol

Parameter

td(V)

tr(V)

tc(off)

tf(i)

Voltage delay time

Voltage rise time

Crossing time

Current fall time

Table 7. Switching times

Test conditions

VDD = 400 V, ID = 30 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17 and

Figure 20)

Min. Typ. Max Unit

- 101 - ns

-

11

- ns

-

14

- ns

-

8

- ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

VSD (2) Forward on voltage

VGS = 0, ISD = 46 A

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 46 A, di/dt = 100 A/µs

-

VDD = 100 V (see Figure 17)

-

trr

Reverse recovery time

ISD = 46 A, di/dt = 100 A/µs

-

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

-

IRRM Reverse recovery current

(see Figure 17)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

46 A

184 A

1.5 V

448

ns

10

µC

43

A

548

ns

14

µC

51

A

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