STW62N65M5 Просмотр технического описания (PDF) - STMicroelectronics
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STW62N65M5
STMicroelectronics
STW62N65M5 Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
Zero gate voltage
IDSS
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 650 V
VGS = 0, VDS = 650 V,
TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 23 A
STW62N65M5
Min. Typ. Max. Unit
650
V
1 µA
100 µA
± 100 nA
3
4
5
V
0.041 0.049 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 100 V,
f = 1 MHz,
- 6420 - pF
-
170
- pF
-
11
- pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
536
- pF
-
146
- pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0
-
1.2
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 23 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
-
142
- nC
-
34
- nC
-
58
- nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/14
DocID024837 Rev 3
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