STL12N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STL12N65M5

N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL12N65M5

3

Test circuits

Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 16. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

μF

D.U.T.

3.3

μF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

μF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 18. Unclamped inductive load test circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

G

RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

AM01470v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

VD

Pw

AM01471v1

Figure 20. Switching time waveform

Concept waveform for Inductive Load Turn-off

Id

90%Vds

90%Id

VDD

IDM

ID

VDD

Vgs

90%Vgs on

10%Vds

Vds

Vgs(I(t))

AM01472v1

Tdelay-off

Trise

Tfall

Tcross -over

10%Id

AM05540v2

DocID17450 Rev 4

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