STP2N62K3 Просмотр технического описания (PDF) - STMicroelectronics
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STP2N62K3 Datasheet PDF : 25 Pages
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STB/D/F/P/U2N62K3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 310 V, ID = 1.1 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
8
ns
4.4
ns
-
-
21
ns
22
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 2.2 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.2 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.2 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2.2 A
-
8.8 A
-
1.6 V
200
ns
- 900
nC
9
A
240
ns
- 1150
nC
10
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 018898 Rev 2
5/25
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