JANTX2N3506 Просмотр технического описания (PDF) - Microsemi Corporation

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Компоненты Описание

производитель

JANTX2N3506

NPN MEDIUM POWER SILICON TRANSISTOR

Microsemi Corporation 

2N3506 thru 2N3507A

MECHANICAL and PACKAGING

• CASE: Hermetically sealed, kovar base, nickel cap.

• TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant (commercial grade

only) with pure matte-tin (commercial grade only).

• MARKING: Part number, date code, manufacturer’s ID.

• POLARITY: NPN (see package outline).

• WEIGHT: Approximately 1.064 grams.

• See Package Dimensions on last page.

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

PART NOMENCLATURE

JAN 2N3506 A (e3)

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

Level improvement

A = 2V gain specification @

-55°C

Blank = 1V gain specification @

-55°C

Symbol

C obo

I CEO

I CEX

I EBO

h FE

V CEO

V CBO

V EBO

SYMBOLS & DEFINITIONS

Definition

Common-base open-circuit output capacitance.

Collector cutoff current, base open.

Collector cutoff current, circuit between base and emitter.

Emitter cutoff current, collector open.

Common-emitter static forward current transfer ratio.

Collector-emitter voltage, base open.

Collector-emitter voltage, emitter open.

Emitter-base voltage, collector open.

T4-LDS-0016, Rev. 2 (111682)

©2011 Microsemi Corporation

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