VS-2KBP005 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-2KBP005 Datasheet PDF : 5 Pages
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www.vishay.com
VS-2KBP Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
Maximum peak one cycle,
non-repetitive surge current
SYMBOL
IO
IFSM
Maximum I2t capability for fusing
I2t
Maximum I2t capability for fusing
I2t
Maximum peak forward voltage per diode VFM
Typical peak reverse leakage
current per diode
IRM
Operating frequency range
f
TEST CONDITIONS
TA = 50 °C, resistive or inductive load
TA = 50 °C, capacitive load
t = 10 ms, 20 ms
Following any rated load condition
t = 8.3 ms, 16.7 ms and with rated VRRM reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
100 % VRRM
reapplied
No voltage
Initial
TJ = TJ maximum
t = 8.3 ms
reapplied
t = 0.1 to 10 ms, no voltage reapplied
IFM = 1 A, TJ = 25 °C
TJ = 25 °C, 100 % VRRM
TJ = 150 °C, 100 % VRRM
VALUES
2.0
1.6
60
63
18
16
26
23
255
1.0
10
1.0
40 to 1000
UNITS
A
A
A2s
A2s
V
μA
mA
Hz
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
TJ, TStg
Approximate weight
VALUES
-40 to 150
4
0.14
UNITS
°C
g
oz.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Resistive, inductive load
Capacitive load
20 40 60 80 100 120 140 160
Maximum Allowable Ambient Temperature (°C)
Fig. 1 - Ambient Temperature Ratings
70
60
50
From any rated
load condition
40
30
20
10
0
10-2
10-1
1
10
Pulse Train Duration (s)
Fig. 2 - Non-Repetitive Surge Ratings
Revision: 25-Oct-17
2
Document Number: 93562
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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