VS-2KBP06(2014) Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-2KBP06 Datasheet PDF : 6 Pages
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VS-2KBP Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum DC output current
Maximum peak one cycle,
non-repetitive surge current
TA = 50 °C, resistive or inductive load
2.0
IO
TA = 50 °C, capacitive load
1.8
IFSM
t = 10 ms, 20 ms
Following any rated load condition
t = 8.3 ms, 16.7 ms and with rated VRRM reapplied
60
63
Maximum I2t capability for fusing
t = 10 ms
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
100 % VRRM
18
reapplied
Initial
16
TJ = TJ maximum
No voltage
26
reapplied
23
Maximum I2t capability for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
255
Maximum peak forward voltage per diode VFM
IFM = 1 A, TJ = 25 °C
1.0
Typical peak reverse leakage
TJ = 25 °C, 100 % VRRM
10
current per diode
IRM
TJ = 150 °C, 100 % VRRM
1.0
Operating frequency range
f
40 to 1000
UNITS
A
A
A2s
A2s
V
μA
mA
Hz
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
TJ, TStg
Approximate weight
VALUES
-40 to 150
4
0.14
UNITS
°C
g
oz.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Resistive, inductive load
Capacitive load
20 40 60 80 100 120 140 160
Maximum Allowable Ambient Temperature (°C)
Fig. 1 - Ambient Temperature Ratings
70
60
50
From any rated
load condition
40
30
20
10
0
10-2
10-1
1
10
Pulse Train Duration (s)
Fig. 2 - Non-Repetitive Surge Ratings
Revision: 04-Apr-14
2
Document Number: 93562
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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