FCH041N65F_F155 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCH041N65F_F155 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FCH041N65F_F155
Top Mark
FCH041N65F
Package Packing Method
TO-247 G03
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 7.6 mA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
650
700
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.71
-
232
-
-
36
18
9790
355
32
192
1278
226
50
90
0.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
60
VDD = 380 V, ID = 38 A,
VGS = 10 V, Rg = 4.7 Ω
-
47
-
190
(Note 4)
-
6.5
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 38 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
213
-
1.3
Quantity
30 units
Max. Unit
-
-
-
10
-
±100
V
V/oC
μA
nA
5
V
41
mΩ
-
S
13020 pF
470
pF
-
pF
-
pF
-
pF
294
nC
-
nC
-
nC
-
Ω
130
ns
104
ns
390
ns
23
ns
76
A
228
A
1.2
V
-
ns
-
μC
©2014 Fairchild Semiconductor Corporation
2
FCH041N65F Rev. C1
www.fairchildsemi.com
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