Q67040-S4276 Просмотр технического описания (PDF) - Infineon Technologies
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производитель
Q67040-S4276 Datasheet PDF : 12 Pages
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SGP15N120 SGP15N120
SGW15N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
Power Semiconductors
11
Jul-02
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