SPB11N60C3(2001) Просмотр технического описания (PDF) - Infineon Technologies
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SPB11N60C3 Datasheet PDF : 14 Pages
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SPP11N60C3, SPB11N60C3
Preliminary data
SPI11N60C3
16 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
0.04 *) Eon includes SDP06S60
mWs
diode commutation losses.
17 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0.24 *) Eon includes SDP06S60
diode commutation losses.
mWs
0.03
0.025
0.16
Eon*
0.02
0.12
0.015
0.01
0.005
Eoff
Eon*
Eoff
0.08
0.04
0
0
2
4
6
8
A
12
ID
0
0
10 20 30 40 50 Ω
70
RG
18 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
11
A
9
19 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
350
mJ
8
250
7
200
6
5
T j(START) =25°C
4
3
T j(START) =125°C
150
100
2
50
1
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
0
20 40 60 80 100 120 °C 160
Tj
Page 9
2001-07-05
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