FQD13N06LTF Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQD13N06LTF Datasheet PDF : 12 Pages
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1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102
is Limited by RDS(on)
100 µs
101
1 ms
10 ms
DC
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0 .5
100
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1 . Z θ J C( t ) = 4 . 5 ℃ /W M a x .
2 . D u t y Fa c t o r , D = t 1/t 2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
4
FQD13N06L / FQU13N06L Rev. 1.7
www.fairchildsemi.com
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