STAC2932F Просмотр технического описания (PDF) - STMicroelectronics

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STAC2932F

Transistors RF MOSFET 300W 50V RF MOS 20dB 175MHz N-Ch

STMicroelectronics 

STAC2932F

RF power transistor

HF/VHF/UHF RF power N-channel MOSFETs

Features

■ Gold metallization

■ Excellent thermal stability

■ Common source push-pull configuration

■ POUT = 300 W min. with 20 dB gain @ 175 MHz

■ In compliance with the 2002/95/EC European

directive

■ ST air cavity packaging technology - STAC™

package

Description

STAC244F

Air cavity

The STAC2932F is a gold metallized N-channel

MOS field-effect RF power transistor, intended for

use in 50 V DC large signal applications up to 250

MHz.

Figure 1. Pin connection

1

The STAC2932F benefits from the latest

1

generation of efficient, patent-pending package

technology, otherwise known as STAC™.

2

2

3

1. Drain

2. Gate

3. Source

(Bottom side)

Table 1. Device summary

Order code

Marking

Base qty.

Package

STAC2932FW

STAC2932F(1)

20

STAC244F

1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.

Packaging

Tray

January 2012

Doc ID 17120 Rev 3

1/14

www.st.com

14

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