T610T-8FP Просмотр технического описания (PDF) - STMicroelectronics
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T610T-8FP Datasheet PDF : 9 Pages
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T610T-8FP
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 8.5 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
1. For both polarities of A2 referenced to A1
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Symbol
Table 5. Thermal resistance
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient (DC)
Max.
Max.
Max.
Max.
Max.
Value
Unit
1.55
V
0.85
V
75
mΩ
5
µA
0.6
mA
2.0
Value
4.5
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
P(W)
8
=180
6
4
2
180°
IT(RMS)(A)
0
0
1
2
3
4
5
6
Figure 2. On-state rms current versus case
temperature (full cycle)
7 IT(RMS)(A)
6
5
4
3
2
1
0
0
25
50
TC(°C)
75 100
=180°
125 150
Figure 3. On-state rms current versus ambient
temperature (free air convection)
IT(RMS)(A)
3.0
=180°
2.5
2.0
1.5
1.0
0.5
0.0
0
Ta(°C)
25 50 75 100 125 150
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00 K = [Zth / Rth]
Zth(j-c)
Zth(j-a)
1.0E-01
tp (s)
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
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