IRF7404QPBF(2007) Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF7404QPBF
(Rev.:2007)

HEXFET Power MOSFET

International Rectifier 

IRF7404QPbF

1000

100

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

1000

100

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

10

1

-1.5V

0.1

0.01

20µs PULSE WIDTH

TJ = 25°C

A

0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

-1.5V

1

0.1

0.01

20µs PULSE WIDTH

TJ = 150°C

A

0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 150°C

10

VDS = -15V

20µs PULSE WIDTH

1

A

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0

ID = -5.3A

1.5

1.0

0.5

0.0

VGS = -4.5V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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