IRS2530DPBF Просмотр технического описания (PDF) - International Rectifier
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IRS2530DPBF Datasheet PDF : 23 Pages
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IRS2530D(S)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Symbol
VB
VS
VHO
VLO
VVCO
VDIM
ICC
IOMAX
dVS/dt
PD
PD
RθJA
RθJA
TJ
TS
TL
Definition
High-Side Floating Supply Voltage
High-Side Floating Supply Offset Voltage
High-Side Floating Output Voltage
Low-Side Output Voltage
VCO Input Voltage††
DIM Input Voltage
†
Supply Current
Maximum allowable current at LO, HO and PFC due to
external power transistor Miller effect.
Allowable VS Pin Voltage Slew Rate
Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin DIP
Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin SOIC
Thermal Resistance, Junction to Ambient, 8-Pin DIP
Thermal Resistance, Junction to Ambient, 8-Pin SOIC
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
---
-500
-50
---
---
---
---
-55
-55
---
Max.
625
VB + 0.3
VB + 0.3
VCC + 0.3
6
VCC + 0.3
20
500
50
1.0
0.625
85
128
150
150
300
Units
V
mA
V/ns
W
ºC/W
ºC
†
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal
breakdown voltage of 15.6V. This supply pin should not be driven by a DC, low impedance power
source greater than the VCLAMP specified in the Electrical Characteristics section.
†† This IC contains a zener clamp structure between the chip VCO and COM which has a nominal
breakdown voltage of 7.25V. This pin should not be driven by a DC, low impedance power source
greater than the VVCOMAX specified in the Electrical Characteristics section.
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