IRFP254NPBF Просмотр технического описания (PDF) - International Rectifier

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производитель

IRFP254NPBF

HEXFET® Power MOSFET

International Rectifier 

IRFP254NPbF

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

1

0.1

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

TJ= 175 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 175°C

10

TJ = 25°C

V DS= 50V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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4.0 ID = 23A

3.0

2.0

1.0

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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