ISPLSI3256E-100LQ Просмотр технического описания (PDF) - Lattice Semiconductor
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ISPLSI3256E-100LQ Datasheet PDF : 15 Pages
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Specifications ispLSI 3256E
Absolute Maximum Ratings 1
Supply Voltage Vcc ........................................................................... -0.5 to +7.0V
Input Voltage Applied ........................................................................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..................................................... -2.5 to VCC +1.0V
Storage Temperature ........................................................................ -65 to 150°C
Case Temp. with Power Applied ...................................................... -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied (304-Pin PQFP) ...... 150°C
Max. Junction Temp. (TJ) with Power Applied (320-Ball BGA) ........ 140°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
SYMBOL
TA
VCC
VIL
VIH
Ambient Temperature
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
MIN.
0
4.75
0
2.0
MAX. UNITS
70
°C
5.25
V
0.8
V
VCC +1
V
Table 2-0005/3256E
Capacitance (TA=25°C,f=1.0 MHz)
SYMBOL
C1
C2
PARAMETER
I/O Capacitance
Clock Capacitance
Data Retention Specifications
PARAMETER
Data Retention
ispLSI Erase/Reprogram Cycles
TYPICAL
10
15
UNITS
pf
pf
TEST CONDITIONS
VCC = 5.0V, VI/O = 2.0V
VCC = 5.0V, VY = 2.0V
Table 2-0006/3256E
MINIMUM
20
10000
MAXIMUM
–
–
UNITS
Years
Cycles
Table 2-0008/3256E
4
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