MPS2222ARLRP Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MPS2222ARLRP

General Purpose Transistors

ON Semiconductor 

MPS2222, MPS2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

MPS2222 V(BR)CEO

30

MPS2222A

40

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

MPS2222 V(BR)CBO

60

MPS2222A

75

MPS2222 V(BR)EBO

5.0

MPS2222A

6.0

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX

–

MPS2222A

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0)

(VCB = 50 Vdc, IE = 0, TA = 125°C)

(VCB = 50 Vdc, IE = 0, TA = 125°C)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ICBO

MPS2222

–

MPS2222A

–

MPS2222

–

MPS2222A

–

IEBO

–

MPS2222A

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBL

–

MPS2222A

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)

(IC = 150 mAdc, VCE = 10 Vdc) (Note 1.)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 1.)

hFE

35

50

75

MPS2222A only

35

100

50

MPS2222

30

MPS2222A

40

Collector–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)

VCE(sat)

MPS2222

–

MPS2222A

–

(IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)

MPS2222

–

MPS2222A

–

VBE(sat)

MPS2222

–

MPS2222A

0.6

(IC = 500 mAdc, IB = 50 mAdc)

MPS2222

–

MPS2222A

–

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Max

Unit

–

Vdc

–

–

Vdc

–

–

Vdc

–

10

nAdc

µAdc

0.01

0.01

10

10

100

nAdc

20

nAdc

–

–

–

–

–

300

–

–

–

Vdc

0.4

0.3

1.6

1.0

Vdc

1.3

1.2

2.6

2.0

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