PBLS6005D,165 Просмотр технического описания (PDF) - NXP Semiconductors.
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PBLS6005D,165 Datasheet PDF : 16 Pages
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NXP Semiconductors
PBLS6005D
60 V PNP BISS loadswitch
600
(1)
hFE
400
(2)
200
(3)
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−1
VCEsat
(V)
−10−1
(1)
(2)
(3)
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0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
−1.0
VBE
(V)
−0.8
(1)
(2)
−0.6
(3)
−0.4
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−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6.
TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
−1.1
VBEsat
(V)
−0.9
(1)
−0.7
(2)
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−0.5
(3)
−0.3
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
−0.1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS6005D_2
Product data sheet
Rev. 02 — 7 September 2009
© NXP B.V. 2009. All rights reserved.
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