K2111 Просмотр технического описания (PDF) - NEC => Renesas Technology
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K2111 Datasheet PDF : 6 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
VGS = 10 V
0.5
TA = 75 ˚C
25 ˚C
–25 ˚C
0
0.01
0.1
1
10
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
500
VGS = 0
f = 1 MHz
200
Ciss
100
Coss
50
Crss
20
10
0.1 0.2 0.5 1 2
5 10 20 50 100
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
0.1
0.01
0.001
0.0001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD - Source to Drain Voltage - V
2SK2111
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1
ID = 0.5 A
0.5
0
5
10
15
20
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
50
tf
20
tr
10
5
2
1
0.05 0.1
td(on)
VDD = 25 V
VGS(on) = 10 V
0.2
0.5 1
2
5
ID - Drain Current - A
4
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