2N6497(2002) Просмотр технического описания (PDF) - ON Semiconductor

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производитель

2N6497
(Rev.:2002)

High Voltage NPN Silicon Power Transistors

ON Semiconductor 

2N6497

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE AA

Q

H

Z

B

4

1 23

F

T

–T–

SEATING

PLANE

C

S

A

U

K

L

V

G

D

N

R

J

STYLE 1:

PIN 1.

2.

3.

4.

BASE

COLLECTOR

EMITTER

COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

A 0.570 0.620

B 0.380 0.405

C 0.160 0.190

D 0.025 0.035

F 0.142 0.147

G 0.095 0.105

H 0.110 0.155

J 0.018 0.025

K 0.500 0.562

L 0.045 0.060

N 0.190 0.210

Q 0.100 0.120

R 0.080 0.110

S 0.045 0.055

T 0.235 0.255

U 0.000 0.050

V 0.045 ---

Z --- 0.080

MILLIMETERS

MIN MAX

14.48 15.75

9.66 10.28

4.07 4.82

0.64 0.88

3.61 3.73

2.42 2.66

2.80 3.93

0.46 0.64

12.70 14.27

1.15 1.52

4.83 5.33

2.54 3.04

2.04 2.79

1.15 1.39

5.97 6.47

0.00 1.27

1.15 ---

--- 2.04

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