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SC1405B

HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

Semtech Corporation 

HIGH SPEED SYNCHRONOUS POWER

MOSFET SMART DRIVER

SC1405B

March 14, 2000

ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.

PARAMETER

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

OVERVOLTAGE PROTECTION

Trip Threshold

Hysteresis

S_MOD

VTRIP

VhysOVP

1.145 1.2 1.255 V

0.8

V

High Level Input Voltage

VIH

Low Level Input Voltage

VIL

ENABLE

2.0

V

0.8

V

High Level Input Voltage

VIH

Low Level Input Voltage

VIL

CO

2.0

V

0.8

V

High Level Input Voltage

VIH

Low Level Input Voltage

VIL

THERMAL SHUTDOWN

2.0

V

0.8

V

Over Temperature Trip Point

Hysteresis

HIGH-SIDE DRIVER

TOTP

THYST

165

°C

10

°C

Peak Output Current

Output Resistance

IPKH

2

A

RsrcTG

duty cycle < 2%, tpw < 100µs,

1

Ω

TJ = 125°C, VBST - VDRN = 4.5V,

VTG = 4.0V (src)+VDRN

RsinkTG

or VTG = 0.5V (sink)+VDRN

.7

Ω

LOW-SIDE DRIVER

Peak Output Current

IPKL

2

A

Output Resistance

RsrcBG

duty cycle < 2%, tpw < 100µs,

1.2

Ω

TJ = 125°C

RsinkBG

VV_5 = 4.6V, VBG = 4V (src),

1.0

Ω

or VLOWDR = 0.5V (sink)

© 2000 SEMTECH CORP.

3

652 MITCHELL ROAD NEWBURY PARK CA 91320

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