IS62VV25616L-10T Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS62VV25616L-10T

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62VV25616L/LL

AC WAVEFORMS

READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)

ISSI ®

ADDRESS

DOUT

tRC

tAA

tOHA

PREVIOUS DATA VALID

tOHA

DATA VALID

AC WAVEFORMS

READ CYCLE NO. 2(1,3) (CE, OE, AND UB/LB Controlled)

ADDRESS

OE

tRC

tAA

CE

LB, UB

tLZCE

DOUT

tLZB

HIGH-Z

tDOE

tLZOE

tACE

tBA

tOHA

tHZOE

tHZCE

DATA VALID

tHZB

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE, UB, or LB = VIL.

3. Address is valid prior to or coincident with CE LOW transition.

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00C

11/30/00

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