EM6A9320BI Просмотр технического описания (PDF) - Etron Technology
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EM6A9320BI Datasheet PDF : 17 Pages
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EtronTech 4Mx32 DDR SDRAM
EM6A9320BI
Absolute Maximum Rating
Symbol
Item
Rating
Unit
Leaded
Pb-Free
VIN, VOUT
Input, Output Voltage
- 0.3 ~ VDDQ+0.3
V
VDD, VDDQ
Power Supply Voltage
-0.3 ~ 3.6
V
TA
Ambient Temperature
0~70
°C
TSTG
Storage Temperature
- 55~150
°C
TSOLDER
Soldering Temperature (10s)
240
260
°C
PD
Power Dissipation
2.0
W
IOUT
Short Circuit Output Current
50
mA
Note : Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage of the device.
Recommended D.C. Operating Conditions (SSTL_2 In/Out, TA = 0 ~ 70 °C)
Symbol
Parameter
VDD Power Supply Voltage
Min.
2.375
Typ.
2.5
Max. Unit
2.625
V
Note
VDDQ Power Supply Voltage(for I/O ) 2.375
2.5
2.625
V
VREF Input Reference Voltage
0.49 x VDDQ
-
0.51 x VDDQ V
VTT Termination Voltage
VREF – 0.04 VREF VREF + 0.04 V
VIH(DC) Input High Voltage
VREF + 0.15 -
VDDQ + 0.3 V
VIL(DC) Input Low Voltage
Vssq - 0.3
-
VREF- 0.15 V
VOH Output High Voltage
Vtt + 0.76
-
-
V
VOL Output Low Voltage
-
-
Vtt- 0.76 V
IIL Input Leakage Current
-5
-
5
uA
IOL Output Leakage Current
-5
-
Note : Under all conditions VDDQ must be less than or equal to VDD.
5
uA
IOH = -15.2 mA
IOL = +15.2 mA
Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C)
Parameter
Input Capacitance (A0~A11, BA0, BA1)
Input Capacitance (CK, CK#, CKE, CS#, RAS#, CAS#, WE#)
DQ & DQS input/output capacitance
DM0~DM3 input/output capacitance
Note: These parameters are periodically sampled and are not 100% tested.
Symbol
CIN1
CIN2
COUT
CIN3
Min.
4
3
6
6
Max.
5
5
8
8
Unit
pF
pF
pF
pF
9
Rev 0.9C
May 2006
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