EM6A9320BI Просмотр технического описания (PDF) - Etron Technology

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EM6A9320BI

4M x 32 DDR SDRAM

Etron Technology 

EtronTech 4Mx32 DDR SDRAM

EM6A9320BI

D.C. Characteristics

(VDD=2.5V ± 5% TA = 0~70 °C)

Parameter & Test Condition

4

Symbol

5

Max

6

Unit

OPERATING CURRENT :

IDD0 220 210 200 mA

One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min)

OPERATING CURRENT :

One bank; Active-Read-Precharge; tRC≥tRC(min);

tCK=tCK(min); lout=0mA;

IDD1 260 240 240 mA

PRECHARGE POWER-DOWN STANDBY CURRENT:

All banks idle; power-down mode; tCK=tCK(min);

IDD2P 75 75 75 mA

CKE=LOW

IDLE STANDLY CURRENT :

CKE = HIGH; CS#=HIGH(DESELECT); All banks idle;

tCK=tCK(min)

IDD2N 100 100 100 mA

ACTIVE POWER-DOWN STANDBY CURRENT :

One bank active; power-down mode; CKE=LOW;

tCK=tCK(min)

IDD3P 75 75 75 mA

ACTIVE STANDBY CURRENT :

CS#=HIGH;CKE=HIGH; one bank active ;

tRC=tRC(max);tCK=tCK(min)

IDD3N 230 220 220 mA

OPERATING CURRENT BURST MODE :

tCK=tCK(min); lout=0mA

IDD4 440 420 400 mA

AUTO REFRESH CURRENT :

tRC=tRFC(min); tCK=tCK(min)

IDD5 330 300 300 mA

SELF REFRESH CURRENT:

Sell Refresh Mode ; CKE<=0.2V;tCK=tCK(min)

IDD6 6

6

6 mA

BURST OPERATING CURRENT 4 bank operation:

IDD7 600 570 550 mA

Four bank interleaving; BL=4; tRC=tRC(min); tCK=tCK(min)

Note: These parameters depend on the cycle rate and these values are measured by the cycle rate

under the minimum value of tCK and tRC.

10

Rev 0.9C

May 2006

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